1. product pro?le 1.1 general description 25 w ldmos transistor intended for pulsed applications in the 0.5 ghz to 1.4 ghz range. 1.2 features n easy power control n integrated esd protection n high ?exibility with respect to pulse formats n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (0.5 ghz to 1.4 ghz) n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications n ampli?ers for pulsed applications in the 0.5 ghz to 1.4 ghz frequency range BLL6H0514-25 ldmos driver transistor rev. 02 17 march 2009 objective data sheet table 1. application information typical rf performance at t case =25 c; i dq = 50 ma; in a class-ab application circuit. mode of operation f t p d v ds p l g p rl in h d p droop(pulse) t r t f (mhz) ( m s) (%) (v) (w) (db) (db) (%) (db) (ns) (ns) pulsed rf 960 to 1215 128 10 50 25 21 10 58 0.05 8 6 1200 to 1400 300 10 50 25 19 10 50 0.05 8 6 caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
BLL6H0514-25_2 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 02 17 march 2009 2 of 8 nxp semiconductors BLL6H0514-25 ldmos driver transistor 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simpli?ed outline graphic symbol 1 drain 2 gate 3 source [1] 1 2 3 sym112 1 3 2 table 3. ordering information type number package name description version BLL6H0514-25 - ?anged ldmost ceramic package; 2 mounting holes; 2 leads sot467c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 100 v v gs gate-source voltage 0.5 13 v i d drain current - 2.5 a t stg storage temperature - 65 +150 c t j junction temperature - 200 c table 5. thermal characteristics symbol parameter conditions typ unit z th(j-c) transient thermal impedance from junction to case t case =85 c; p l =25w t p = 100 m s; d = 10 % 0.86 k/w t p = 200 m s; d = 10 % 1.11 k/w t p = 300 m s; d = 10 % 1.29 k/w t p = 100 m s; d = 20 % 1.15 k/w
BLL6H0514-25_2 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 02 17 march 2009 3 of 8 nxp semiconductors BLL6H0514-25 ldmos driver transistor 6. characteristics 6.1 ruggedness in class-ab operation the BLL6H0514-25 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =50v; i dq = 50 ma; p l = 25 w; f = 1.4 ghz; t p = 128 m s; d = 10 %. 7. application information 7.1 impedance information table 6. dc characteristics t j = 25 c; per section unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = ma 110 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 18 ma 1.4 - 2.2 v i dss drain leakage current v gs =0v; v ds =50v - - 1 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 2.1 2.5 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 100 na g fs forward transconductance v ds =10v; i d = 18 ma 120 150 - ms r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =63ma - 1500 2750 m w table 7. rf characteristics mode of operation: pulsed rf; t p = 128 m s; d = 10 %; rf performance at v ds =50v; i dq =50ma; f = 1.4 ghz; t case =25 c; unless otherwise speci?ed, in a class-ab production test circuit. symbol parameter conditions min typ max unit p l output power 25 - - w v ds drain-source voltage p l =25w - - 50 v g p power gain p l = 25 w 18 20 - db rl in input return loss p l =25w - 10 - db h d drain ef?ciency p l =25w 50 55 - % p droop(pulse) pulse droop power p l = 25 w - 0 0.3 db t r rise time p l =25w - 20 50 ns t f fall time p l =25w - 6 50 ns table 8. typical impedance typical values per section unless otherwise speci?ed. f z s z l ghz w w 0.5 0.6 0.7
BLL6H0514-25_2 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 02 17 march 2009 4 of 8 nxp semiconductors BLL6H0514-25 ldmos driver transistor 7.2 typical data 0.8 0.9 1.0 1.1 1.2 1.3 1.4 fig 1. de?nition of transistor impedance table 8. typical impedance typical values per section unless otherwise speci?ed. f z s z l ghz w w 001aaf059 drain z l z s gate table 9. application information typical rf performance at t case =25 c; i dq = 50 ma; in a class-ab application circuit. mode of operation f t p d v ds p l g p rl in h d p droop(pulse) t r t f (mhz) ( m s) (%) (v) (w) (db) (db) (%) (db) (ns) (ns) pulsed rf 960 to 1215 128 10 50 25 21 10 58 0.05 8 6 1200 to 1400 300 10 50 25 19 10 50 0.05 8 6
BLL6H0514-25_2 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 02 17 march 2009 5 of 8 nxp semiconductors BLL6H0514-25 ldmos driver transistor 8. package outline fig 2. package outline sot467c references outline version european projection issue date iec jedec eiaj sot467c 99-12-06 99-12-28 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 dimensions (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 d d 1 u 1 1 3 2 a u 2 e e 1 p b h q f c unit q cd 9.27 9.02 d 1 5.92 5.77 e 5.97 5.72 e 1 fh p q mm 0.184 0.155 inch b 14.27 20.45 20.19 u 2 u 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2 a m m c c a w 1 w 2 ab m m m q b sot467c
BLL6H0514-25_2 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 02 17 march 2009 6 of 8 nxp semiconductors BLL6H0514-25 ldmos driver transistor 9. abbreviations 10. revision history table 10. abbreviations acronym description ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency smd surface mounted device vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes BLL6H0514-25_2 20090317 objective data sheet - BLL6H0514-25_1 modi?cations: ? descriptive title changed ? corrected output power notation from 500 w to 25 w where applicable ? section 1.2 on page 1 : updated features ? t ab le 4 on page 2 : added i d value ? t ab le 5 on page 2 : added z th(j-c) values ? corrected some typos BLL6H0514-25_1 20090305 objective data sheet - -
BLL6H0514-25_2 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 02 17 march 2009 7 of 8 nxp semiconductors BLL6H0514-25 ldmos driver transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 11.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 11.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. 11.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BLL6H0514-25 ldmos driver transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 17 march 2009 document identifier: BLL6H0514-25_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 13. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation. . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 impedance information . . . . . . . . . . . . . . . . . . . 3 7.2 typical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 6 11 legal information. . . . . . . . . . . . . . . . . . . . . . . . 7 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7 11.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12 contact information. . . . . . . . . . . . . . . . . . . . . . 7 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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